Welcome to the MWE - Millimeter-Wave Electronics Group
Welcome to the web site of the Millimeter-Wave Electronics Group at the Department for Information Technology and Electrical Engineering (D-ITET) at ETH Zürich.
Please note that the "Microwave Electronics Group", formerly part of Laboratory for Electromagnetic Fields and Microwave Electronics (Institut für Feldtheorie und Höchstfrequenztechnik), has become the "Millimeter-Wave Electronics Group". The Head of the ETH Millimeter-Wave Electronics Group Group, Prof. Colombo Bolognesi is the successor to Prof. em. Werner Bächtold who headed the Microwave Electronics Group from 1987-2005. Established in 2006, the Millimeter-Wave Electronics Group is home to some of the world's fastest transistors based on advanced materials such as InP/GaAsSb, AlInAs/GaInAs, and AlGaN/GaN.
The Research and Teaching activities of the Millimeter-Wave Electronics Group address the following topics:
- Semiconductor Device Physics
- mm-Wave Heterostructure Transistors (HEMTs/HBTs)
- Heterostructure Physics
- III-V Compound Semiconductor Epitaxy (MBE/MOCVD)
If you are looking for a Diploma or Semester Thesis in relation to the above subjects, please check the list of Available Projects or inquire with your own idea. For PhD and PostDoc opportunities, check under "Open Positions."
Applicants interested in joining the group should contact Prof. Bolognesi.


