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Journal Papers

 
Author Title Published in Citation
V. Teppati,
C.R. Bolognesi
Evaluation and Reduction of Calibration Residual Uncertainty in Load-Pull Measurements at Millimeter-Wave Frequencies
 IEEE Transactions on Instrumentation and Measurement, Vol. 61, Issue 3, pp.817 -822, march 2012 Show Citation
L. Liu,
A.R. Alt,
H. R. Benedickter,
C.R. Bolognesi
InP-HEMT X-band Low-Noise Amplifier With Ultralow 0.6-mW Power Consumption
 Electron Device Letters IEEE, Vol. 33, Issue 2, pp.209 -211, feb. 2012 Show Citation
S. Tirelli,
D. Marti,
H. Sun,
A. Alt,
J. F. Carlin,
N. Grandjean,
C. R. Bolognesi
Fully Passivated AlInN/GaN HEMTs With f(T)/f(MAX) of 205/220 GHz
 IEEE Electron Device Lett., Vol. 32, Issue 10, pp.1364-1366, October 2011 Show Citation
H. Sun,
A.R. Alt,
S. Tirelli,
D. Marti,
H. Benedickter,
E. Piner,
C.R. Bolognesi
Nanometric AlGaN/GaN HEMT Performance with Implant or Mesa Isolation
 IEEE Electron Device Lett., Vol. 32, Issue 8, pp.1056 - 1058, August 2011 Show Citation
O. Ostinelli,
C. R. Bolognesi
Demonstration of Ditertiary Butyl Sulfide as a Dopant Source for n-Type InP by Metalorganic Vapor-Phase Epitaxy
 Applied Physics Express, Vol. 4, Issue 8, pp.085501, July 2011 Show Citation
V. Teppati,
Y. Zeng,
O. Ostinelli,
C. R. Bolognesi
Highly Efficient InP/GaAsSb DHBTs With 62\% Power-Added Efficiency at 40 GHz
 IEEE Electron Device Lett., Vol. 32, Issue 7, pp.886-888, July 2011 Show Citation
D. Marti,
C. R. Bolognesi,
Y. Cordier,
M. Chmielowska,
M. Ramdani
RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110)
 Applied Physics Express, Vol. 4, Issue 6, June 2011 Show Citation
Rickard Lovblom,
Ralf Fluckiger,
Yuping Zeng,
Olivier Ostinelli,
Andreas R. Alt,
Hansruedi Benedickter,
C. R. Bolognesi
InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency
 IEEE Electron Device Letters, Vol. 32, Issue 5, pp.629-631, May 2011 Show Citation
H. Sun,
A. Alt,
H. Benedickter,
E. Feltin,
J. F. Carlin,
M. Gonschorek,
N. Grandjean,
C. R. Bolognesi
High-speed and low-noise AlInN/GaN HEMTs on SiC
 Physica Status Solidi A - Applications and Materials Science, Vol. 208, Issue 2, pp.429-433, February 2011 Show Citation
Olivier Ostinelli,
Andreas R. Alt,
Rickard Lovblom,
C. R. Bolognesi
Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors
 Journal of Applied Physics, Vol. 108, Issue 11, pp.114502-1-114502-6, December 2010 Show Citation
Yuping Zeng,
Olivier Ostinelli,
Rickard Lovblom,
and Andreas R. Alt,
Hansruedi Benedickter,
C.R. Bolognesi
400 GHz InP/GaAsSb DHBTs with low-noise microwave performance
 IEEE Electron Device Lett., Vol. 31, Issue 10, pp.1122-1124, Oct 2010 Show Citation
Haifeng Sun,
A.R. Alt,
H. Benedickter,
E. Feltin,
J.-F. Carlin,
M. Gonschorek,
N. Grandjean,
C.R. Bolognesi
High-speed and low-noise AlInN/GaN HEMTs on SiC
 Phys. Status Solidi A, Vol. 208, Issue 2, pp.429-433, October 2010 Show Citation
Haifeng Sun,
A.R. Alt,
H. Benedickter,
E. Feltin,
J.-F. Carlin,
M. Gonschorek,
N. Grandjean,
C.R. Bolognesi
205-GHz (Al In)N/GaN HEMTs
 IEEE Electron Device Lett., Vol. 31, Issue 9, pp.957 -959, September 2010 Show Citation
Haifeng Sun,
A.R. Alt,
H. Benedickter,
C.R. Bolognesi,
E. Feltin,
J.-F. Carlin,
M. Gonschorek,
N. Grandjean
Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with FT = 143 GHz
 Appl. Phys. Express, Vol. 3, Issue 6, pp.094101, September 2010 Show Citation
C.R. Bolognesi,
N. Grandjean
205-GHz (Al In)N/GaN HEMTs
 GaN HEMTs advance to ultrahigh bandwidths, Vol. 16, Issue 6, pp.15-21, August 2010 Show Citation
Haifeng Sun,
A.R. Alt,
H. Benedickter,
E. Feltin,
J.-F. Carlin,
M. Gonschorek,
N. Grandjean,
C.R. Bolognesi
Low-Noise Microwave Performance of 0.1µm Gate AlInN/GaN HEMTs on SiC
 IEEE Microwave and Wireless Components Lett., Vol. 20, Issue 8, pp.453 -455, August 2010 Show Citation
Yuping Zeng,
Rickard Lovblom,
Olivier Ostinelli,
C. R. Bolognesi
(Ga In)P emitter composition effect on the performance of (Ga In)P/GaAsSb/InP DHBTs grown by MOCVD
 Physics Status Solidi C, Vol. 7, Issue 10, pp.2490-2493, June 2010 Show Citation
Olivier Ostinelli,
Andreas R. Alt,
Rickard Lovblom,
C. R. Bolognesi
Semi-insulating iron-doped InP buffer layers for Al-free GaInP/GaInAs pHEMTs
 22nd Indium Phosphide and Related Materials (IPRM) Conference, pp.1-4, May 2010 Show Citation
Haifeng Sun,
A.R. Alt,
H. Benedickter,
E. Feltin,
J.-F. Carlin,
M. Gonschorek,
N. Grandjean,
C.R. Bolognesi
100-nm-Gate (Al In)N/GaN HEMTs Grown on SiC With fT = 144 GHz
 IEEE Electron Device Lett., Vol. 31, Issue 4, pp.293 -295, april 2010 Show Citation
S. Tirelli,
D. Marti,
H. Sun,
A.R. Alt,
H. Benedickter,
E. Piner,
C.R. Bolognesi
107-GHz (Al Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies
 IEEE Electron Device Lett., Vol. 31, Issue 4, pp.296 -298, april 2010 Show Citation
Haifeng Sun,
Diego Marti,
Stefano Tirelli,
Andreas R. Alt,
Hansruedi Benedickter,
C.R. Bolognesi
Millimeter-wave GaN-based HEMT development at ETH-Zürich
 International Journal of Microwave and Wireless Technologies, Vol. 1, Issue 1, pp.1-6, April 2010 Show Citation
Y.P. Zeng,
H. Benedickter,
B.-R. Wu,
C.R. Bolognesi
Microwave noise characterisation of AlInAs/ GaAsSb/InP DHBTs
 IEEE Electronics Letters, Vol. 45, Issue 23, pp.1190-1191, November 2009 Show Citation
H.F. Sun,
A. R. Alt,
D. Marti,
M. Vetter,
H. Benedickter,
C. R. Bolognesi
Small-signal microwave performance comparison of deep submicron AlGaN/GaN high electron mobility transistors on high-resistivity silicon and insulating substrates
 Appl. Phys. Express, Vol. 2, Issue 11, pp.111002-1-3, November 2009 Show Citation
A.R. Subramanian,
A.R. Alt,
L. Dong,
B.E. Kratochvil,
C.R. Bolognesi,
B.J. Nelson
Electrostatic actuation and electromechanical switching behavior of one-dimensional nanostructures
 ACS Nano, Vol. 3, Issue 10, pp.2953–2964, October 2009 Show Citation
Haifeng Sun,
Andreas R. Alt,
Hansruedi Benedickter,
C.R. Bolognesi,
Eric Feltin,
Jean-Francois Carlin,
Marcus Gonschorek,
Nicolas Grandjean,
Thomas Maier,
Rudiger Quay
102-GHz AlInN/GaN HEMTs on Silicon with 2.5-W/mm Output Power at 10 GHz
 IEEE Electron Device Lett., Vol. 30, Issue 8, pp.796-798, August 2009 Show Citation
D. Lackner,
O.J. Pitts,
S. Najmi,
P. Sandhu,
K.L. Kavanagh,
A. Yang,
M. Steger,
M.L.W. Thewalt,
Y. Wang,
D.W. McComb,
C.R. Bolognesi,
S.P. Watkins
Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications
 J .Cryst. Growth, Vol. 311, Issue 14, pp.3563-3567, July 2009 Show Citation
H.F. Sun,
A.R. Alt,
H. Benedickter,
C.R. Bolognesi
100-nm gate AlGaN/GaN HEMTs on silicon with fT = 90 GHz
 Electronics Lett., Vol. 47, Issue 7, pp.376-377, March 2009 Show Citation
O. Ostinelli,
C.R. Bolognesi
Impact of CBr4 V/III ratio temperature and AsH3 concentration on MOVPE growth of GaAsSb:C
 J. Crystal Growth, Vol. 311, Issue 6, pp.1508-1514, March 2009 Show Citation
Haifeng Sun,
Andreas R. Alt,
Hansruedi Benedickter,
C. R. Bolognesi
High-performance 0.1-µm gate AlGaN/GaN HEMTs on silicon with low-noise figure at 20 GHz
 IEEE Electron Device Lett., Vol. 30, Issue 2, pp.107-109, February 2009 Show Citation
C.R. Bolognesi
Antimonides chase terahertz target
 Compound Semiconductor, Vol. 14, Issue 7, pp.21-23, August 2008 Show Citation
H. G. Liu,
O. Ostinelli,
Y. P. Zeng,
C. R. Bolognesi
Emitter-size effects and ultimate scalability of InP:GaInP/GaAsSb/InP DHBTs
 IEEE Electron Dev. Lett., Vol. 29, Issue 6, pp.546-548, June 2008 Show Citation
Y.P. Zeng,
O. Ostinelli,
H.G. Liu,
C.R. Bolognesi
Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsSb DHBTs
 Solid-State Electronics, Vol. 52, pp.1202-1206, 2008 Show Citation
H.F. Sun,
C.R. Bolognesi
Impact of selective Al2O3 passivation on current collapse in AlGaN/GaN HEMTs
 Electronics Letters, Vol. 43, Issue 23, pp.1314-1315, November 2007 Show Citation
H.G. Liu,
O. Ostinelli,
Y.P. Zeng,
C.R. Bolognesi
High-current-gain InP/GaInP/GaAsSb/InP DHBTs with fT = 436 GHz
 IEEE Electron Device Lett., Vol. 28, Issue 10, pp.852-855, October 2007 Show Citation
H. Liu,
O. Ostinelli,
Y. Zeng,
C.R. Bolognesi
High-gain arsenic-rich n-p-n InP/GaAsSb DHBTs with fT > 420 GHz
 IEEE Tans. Electron Devices, Vol. 54, Issue 10, pp.2792-2795, October 2007 Show Citation
N.G. Tao,
C.R. Bolognesi
Kirk effect mechanism in type-II InP/GaAsSb double heterojunction bipolar transistors
 J. Appl. Phys., Vol. 102, Issue 6, pp.064511, September 2007 Show Citation
W. Zhou,
C.W. Tang,
J. Zhu,
K.M. Lau,
Y. Zeng,
H.G. Liu,
N.G. Tao,
C.R. Bolognesi
Metamorphic heterostructure InP/GaAsSb/InP HBTs on GaAs substrates by MOCVD
 IEEE Electron Device Lett., Vol. 28, Issue 7, pp.539-542, July 2007 Show Citation
J.M. Ruiz-Palmero,
U. Hammer,
H. Jäckel,
H.G. Liu,
C.R. Bolognesi
Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits
 Solid-State Electronics, Vol. 51, Issue 6, pp.842-859, June 2007 Show Citation
N.G. Tao,
H.G. Liu,
C.R. Bolognesi
Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs
 Solid-State Electronics, Vol. 51, Issue 6, pp.995-1001, June 2007 Show Citation
H.F. Sun,
Andreas R. Alt,
C.R. Bolognesi
Submicrometer Copper T-Gate AlGaN/GaN HFETs: The Gate Metal stack Effect
 IEEE Electron Device Lett., Vol. 28, Issue 5, pp.350-353, May 2007 Show Citation
H.F. Sun,
D.W. Disanto,
C.R. Bolognesi
Performance comparison of Cu and Ni gates for deep submicrometer AlGaN/GaN HFETs
 phys. stat. sol. (c), Vol. 4, Issue 5, pp.1658-1661, April 2007 Show Citation
N. G. M. Tao,
H. G. Liu,
C. R. Bolognesi
Two-dimensional simulation of type-II InP/GaAsSb/InP double heterojunction bipolar transistors
 Physica Stat. Solidi C, Vol. 4, Issue 5, pp.1675-1679, April 2007 Show Citation
H.F. Sun,
C.R. Bolognesi
Anomalous behavior of AlGaN/GaN heterostructure field-effect transistors at cryogenic temperatures: from current collapse to current enhancement with cooling
 Appl. Phys. Lett., Vol. 90, pp.123505, March 2007 Show Citation
D.W. DiSanto,
C.R. Bolognesi
At-bias extraction of access parasitic resistances in AlGaN/GaN HEMTs: impact on device linearity and channel electron velocity
 IEEE Trans. Electron Devices, Vol. 53, Issue 12, pp.2914-2919, December 2006 Show Citation
H.G. Liu,
S.P. Watkins,
C.R. Bolognesi
15-nm base type-II InP/GaAsSb/InP DHBTs with fT = 384 GHz and a 6-V BVCEO
 IEEE Trans. Electron Devices, Vol. 53, Issue 3, pp.559-561, March 2006 Show Citation
D.W. DiSanto,
C.R. Bolognesi
At bias extraction of parasitic source and drain resistances in AlGaN/GaN HFETs: bias dependence and implications for device modelling and physics
 Physica Stat. Solidi C, Vol. 3, Issue 3, pp.478-481, March 2006 Show Citation
H.G. Liu,
D.W. DiSanto,
S.P. Watkins,
C.R. Bolognesi
InP/GaAsSb/InP DHBTs with fT = 300 GHz and high maximum oscillation frequencies: the effect of scaling on device performance
 Physica Stat. Solidi C, Vol. 3, Issue 3, pp.461-464, March 2006 Show Citation
D.W. DiSanto,
H.F. Sun,
C.R. Bolognesi
Ozone passivation of slow transient current collapse in AlGaN/GaN field-effect transistors: The role of threading dislocations and the passivation mechanism
 Appl. Phys. Lett., Vol. 88, Issue 1, pp.013504, January 2006 Show Citation
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