Science Watch interviews Prof. Bolognesi about the impact of MWE`s 205 GHz GaN record paper,...

MWE demonstrates new n-type dopant source for MOCVD InP growth

Full paper on APEX servers:...

The MWE reports the first microwave performance of AlGaN/GaN HEMTs grown on CMOS compatible (110)...

IEEE Electron Device Letter publishes new record from MWE

MWE Record highlighted by APEX Editorial Board on APEX Spotlights:

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